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t ga 2624 - cp 9 to 10 ghz, 1 6 w gan power amplifier preliminary datasheet: 11 - 03 - 14 - 1 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com applications ? weather and marine radar functional block diagram product features ? frequency range: 9 C 10 ghz ? pou t: 4 2 dbm ( p in = 15 dbm ) ? pae: > 37 % ( p in = 15 dbm ) ? power gain: 2 7 db (p in = 15 dbm) ? bias: v d = 28 v , i dq = 365 ma, v g = - 2.6 v typical ( pulsed : pw = 100 s , dc = 10% ) ? package dimensions: 15.2 x 15.2 x 3. 5 mm ? package base is pure cu offering superior thermal management ordering information part eccn description tg a2 62 4 - cp 3a001.b.2.b 9 C 10 ghz, 1 6 w gan power amplifier general description triquints tga262 4 - cp is a packaged high - power x - band amplifier fabricated on triquints tqgan25 0.25 um gan on sic process. operating from 9 to 10 ghz, the tga2624 - cp achieves 42 dbm saturated output power, a power - added efficiency of > 37 % , and power gain of 2 7 db . the tga262 4 - cp is packaged in a 10 - lead 15x15 mm bolt - down package with a cu base for superior thermal management. it can support a range of bias voltages and performs well u nder both pulse d and cw conditions. both rf ports are internally dc blocked and matched to 50 ohms allowing for simple system integration. the tga262 4 - cp is ideally suited for both commercial and defense applications. lead free and rohs compliant. evaluation boards are available upon request. p in configuration p ad no. symbol 1, 5 v g 2, 4, 7, 9 gnd 3 rf in 6, 10 v d 8 rf out 6 7 8 9 10 5 4 3 2 1
t ga 2624 - cp 9 to 10 ghz, 1 6 w gan power amplifier preliminary datasheet: 11 - 03 - 14 - 2 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com absolute maximum ratings parameter value drain voltage (v d ) 40 v gate voltage range (v g ) - 8 to 0 v drain current (i d ) 3 a gate current (i g ) - 6 to 14 (1) ma power dissipation ( p diss ) , 85c 53 w input power, cw, 50 , (p in ) 21 dbm input power, cw, vswr 6 :1, v d = 28 v, 85 c, (p in ) 21 dbm channel temp erature (t ch ) 275 c mounting temperature (30 seconds) 26 0 c storage temperature - 55 to 150 c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. (1) max rating for i g is at channel temperature (t ch ) of 200 c . recommended operating conditions parameter value drain voltage ( v d ) : pulsed 28 v drain current ( i dq ) 365 ma drain current under rf drive (i d_drive ) see plots p. 6 gate voltage (v g ) ? 2.6 v (typ.) gate current under rf drive (i g_drive ) see plots p. 6 temperature (t base ) - 40 to 85 c electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted : 25 c, v d = 28 v (pw = 1 00 s , dc = 1 0 % ) , i dq = 365 ma, v g = - 2.6 v typical . parameter min typical max units operational frequency range 9 10 ghz small signal gain 36.5 db input return loss > 1 0 db output return loss > 9 db output power (at p in = 15 dbm ) 4 2 dbm power added efficiency (at p in = 15 dbm ) > 37 % power gain (at p in = 15 dbm ) 2 7 db output power temperature coefficient pulsed (25 c to 85 c only) cw - 0.0 03 - 0.0 1 dbm/ c recommended operating voltage 25 28 32 v
t ga 2624 - cp 9 to 10 ghz, 1 6 w gan power amplifier preliminary datasheet: 11 - 03 - 14 - 3 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) cw, v d = 28 v , i dq = 365 ma , t base = 85 c, freq = 9.5 ghz, p in = 15 dbm , p out = 42.2 dbm p diss =26 w, i d_drive = 1.49 a 3.4 c /w channel temperature (t ch ) (u nder rf drive) 17 4 c median lifetime (t m ) 1.4 e+ 8 hrs thermal resistance ( jc ) (1) v d = 28 v , i dq = 365 ma , (pulsed: pw = 100 s, dc = 10 %), t base = 85 c, freq = 9.5 ghz, p in = 15 dbm , p out = 42.7 dbm , p diss =27 w, i d_drive = 1.64 a 2.24 c /w channel temperature (t ch ) (under rf drive) 147 c median lifetime (t m ) 2.5 e+ 10 hrs notes: 1. thermal resistance measured to back of package. test conditions: v d = 40 v; failure criteria = 10% reduction in i d_max 20 22 24 26 28 30 32 8.5 9.0 9.5 10.0 10.5 power dissipation (w) frequency (ghz) p diss vs. frequency vs. t base cw, p in = 15 dbm - 40 c 25 c 85 c 20 22 24 26 28 30 32 8.5 9.0 9.5 10.0 10.5 power dissipation (w) frequency (ghz) p diss vs. frequency vs. t base pw = 100 s, dc = 10%, p in = 15 dbm - 40 c 25 c 85 c 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 1e+11 1e+12 1e+13 1e+14 1e+15 1e+16 1e+17 1e+18 25 50 75 100 125 150 175 200 225 250 275 median lifetime, t m (hours) channel temperature, t ch ( ? c) median lifetime vs. channel temperature fet 13
t ga 2624 - cp 9 to 10 ghz, 1 6 w gan power amplifier preliminary datasheet: 11 - 03 - 14 - 4 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance: large signal condition s unless otherwise specified : v d = 28 v, i dq = 365 ma, v g = - 2.6 v typical . 30 32 34 36 38 40 42 44 0 2 4 6 8 10 12 14 16 18 p out (dbm) p in (dbm) output power vs. input power vs. temp. pw = 100 s, dc = 10 %, freq = 9.5 ghz - 40 c 25 c 85 c 30 32 34 36 38 40 42 44 0 2 4 6 8 10 12 14 16 18 p out (dbm) p in (dbm) output power vs. input power vs. i dq pw = 100 s, dc = 10 % , freq = 9.5 ghz 145 ma 365 ma 38 39 40 41 42 43 44 8.5 9.0 9.5 10.0 10.5 p out (dbm) frequency (ghz) output power vs. frequency vs. v d 28 v 30 v 32 v pw = 100 s, dc = 10%, p in = 15 dbm, temp = 25 c 25 v 38 39 40 41 42 43 44 8.5 9.0 9.5 10.0 10.5 p out (dbm) frequency (ghz) output power vs. frequency vs. temp. pw = 100 s, dc = 10%, p in = 15 dbm - 40 c 25 c 85 c 38 39 40 41 42 43 44 8.5 9.0 9.5 10.0 10.5 p out (dbm) frequency (ghz) output power vs. freq. vs. input power 10 dbm 15 dbm 16 dbm pw = 100 s, dc = 10 %, temp = 25 c 14 dbm 38 39 40 41 42 43 44 8.5 9.0 9.5 10.0 10.5 p out (dbm) frequency (ghz) output power vs. freq. vs. drain current 145 ma 365 ma pw = 100 s, dc = 10 %, p in = 15 dbm, temp = 25 c
t ga 2624 - cp 9 to 10 ghz, 1 6 w gan power amplifier preliminary datasheet: 11 - 03 - 14 - 5 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal condition s unless otherwise specified : v d = 28 v, i dq = 365 ma, v g = - 2.6 v typical . 30 32 34 36 38 40 42 44 46 0 2 4 6 8 10 12 14 16 18 power added efficiency (%) p in (dbm) pae vs. input power vs. temperature pw = 100 s, dc = 10 %, freq = 9.5 ghz - 40 c 25 c 85 c 21 24 27 30 33 36 39 42 0 2 4 6 8 10 12 14 16 18 power gain (db) p in (dbm) power gain vs. input power vs. temp. pw = 100 s, dc = 10 %, freq = 9.5 ghz - 40 c 25 c 85 c 30 32 34 36 38 40 42 44 46 8.5 9.0 9.5 10.0 10.5 power added efficiency (%) frequency (ghz) pae vs. frequency vs. v d pw = 100 s, dc = 10 %, p in = 15 dbm, temp = 25 c 28 v 30 v 32 v 25 v 30 32 34 36 38 40 42 44 46 8.5 9.0 9.5 10.0 10.5 power added efficiency (%) frequency (ghz) pae vs. frequency vs. temperature pw = 100 s, dc = 10 %, p in = 15 dbm - 40 c 25 c 85 c 24 25 26 27 28 29 30 8.5 9.0 9.5 10.0 10.5 power gain (db) frequency (ghz) power gain vs. frequency vs. v d pw = 100 s, dc = 10 %, p in = 15 dbm, temp = 25 c 28 v 30 v 32 v 25 v 24 25 26 27 28 29 30 8.5 9.0 9.5 10.0 10.5 power gain (db) frequency (ghz) power gain vs. frequency vs. temperature pw = 100 s, dc = 10 %, p in = 15 dbm - 40 c 25 c 85 c
t ga 2624 - cp 9 to 10 ghz, 1 6 w gan power amplifier preliminary datasheet: 11 - 03 - 14 - 6 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance: large signal condition s unless otherwise specified : v d = 28 v, i dq = 365 ma, v g = - 2.6 v typical . 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 0 2 4 6 8 10 12 14 16 18 drain current (a) p in (dbm) drain current vs. input power vs. temp. pw = 100 s, dc = 10 %, freq = 9.5 ghz - 40 c 25 c 85 c -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 8.5 9.0 9.5 10.0 10.5 gate current (ma) frequency (ghz) gate current vs. frequency vs. v d 28 v 30 v 32 v pw = 100 s, dc = 10 %, p in = 15 dbm, temp = 25 c 25 v -0.5 0.5 1.5 2.5 3.5 4.5 5.5 8.5 9.0 9.5 10.0 10.5 gate current (ma) frequency (ghz) gate current vs. frequency vs. temp. pw = 100 s, dc = 10 %, p in = 15 dbm - 40 c 25 c 85 c -0.5 0.5 1.5 2.5 3.5 4.5 5.5 6.5 0 2 4 6 8 10 12 14 16 18 gate current (ma) p in (dbm) gate current vs. input power vs. temp. pw = 100 s, dc = 10 %, freq = 9.5 ghz - 40 c 25 c 85 c 1.0 1.2 1.4 1.6 1.8 2.0 8.5 9.0 9.5 10.0 10.5 drain current (a) frequency (ghz) drain current vs. frequency vs. v d pw = 100 s, dc = 10 %, p in = 15 dbm, temp = 25 c 28 v 30 v 32 v 25 v 1.0 1.2 1.4 1.6 1.8 2.0 8.5 9.0 9.5 10.0 10.5 drain current (a) frequency (ghz) drain current vs. frequency vs. temp. pw = 100 s, dc = 10 %, p in = 15 dbm - 40 c 25 c 85 c
t ga 2624 - cp 9 to 10 ghz, 1 6 w gan power amplifier preliminary datasheet: 11 - 03 - 14 - 7 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance: large signal condition s unless otherwise specified : v d = 28 v, i dq = 365 ma, v g = - 2.6 v typical. 30 32 34 36 38 40 42 44 0 2 4 6 8 10 12 14 16 18 p out (dbm) p in (dbm) output power vs. input power vs. i dq cw, freq = 9.5 ghz 145 ma 365 ma 38 39 40 41 42 43 44 8.5 9.0 9.5 10.0 10.5 p out (dbm) frequency (ghz) output power vs. frequency vs. temp. cw, p in = 15 dbm - 40 c 25 c 85 c 38 39 40 41 42 43 44 8.5 9.0 9.5 10.0 10.5 p out (dbm) frequency (ghz) output power vs. frequency vs. v d 28 v 30 v 32 v cw, p in = 15 dbm, temp = 25 c 25 v 38 39 40 41 42 43 44 8.5 9.0 9.5 10.0 10.5 p out (dbm) frequency (ghz) output power vs. freq. vs. input power 9 dbm 15 dbm 18 dbm cw, temp = 25 c 12 dbm 38 39 40 41 42 43 44 8.5 9.0 9.5 10.0 10.5 p out (dbm) frequency (ghz) output power vs. freq. vs. drain current 145 ma 365 ma cw, p in = 15 dbm, temp = 25 c 30 32 34 36 38 40 42 44 0 2 4 6 8 10 12 14 16 18 p out (dbm) p in (dbm) output power vs. input power vs. temp. cw, freq = 9.5 ghz - 40 c 25 c 85 c
t ga 2624 - cp 9 to 10 ghz, 1 6 w gan power amplifier preliminary datasheet: 11 - 03 - 14 - 8 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance: large signal condition s unless otherwise specified : v d = 28 v, i dq = 365 ma, v g = - 2.6 v typical. 30 32 34 36 38 40 42 44 46 0 2 4 6 8 10 12 14 16 18 power added efficiency (%) p in (dbm) pae vs. input power vs. temperature cw, freq = 9.5 ghz - 40 c 25 c 85 c 21 24 27 30 33 36 39 42 0 2 4 6 8 10 12 14 16 18 power gain (db) p in (dbm) power gain vs. input power vs. temp. cw, freq = 9.5 ghz - 40 c 25 c 85 c 30 32 34 36 38 40 42 44 46 8.5 9.0 9.5 10.0 10.5 power added efficiency (%) frequency (ghz) pae vs. frequency vs. v d 28 v 30 v 32 v cw, p in = 15 dbm, temp = 25 c 25 v 30 32 34 36 38 40 42 44 46 8.5 9.0 9.5 10.0 10.5 power added efficiency (%) frequency (ghz) pae vs. frequency vs. temperature cw, p in = 15 dbm - 40 c 25 c 85 c 24 25 26 27 28 29 30 8.5 9.0 9.5 10.0 10.5 power gain (db) frequency (ghz) power gain vs. frequency vs. v d 28 v 30 v 32 v cw, p in = 15 dbm, temp = 25 c 25 v 24 25 26 27 28 29 30 8.5 9.0 9.5 10.0 10.5 power gain (db) frequency (ghz) power gain vs. frequency vs. temperature cw, p in = 15 dbm - 40 c 25 c 85 c
t ga 2624 - cp 9 to 10 ghz, 1 6 w gan power amplifier preliminary datasheet: 11 - 03 - 14 - 9 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance: large signal condition s unless otherwise specified : v d = 28 v, i dq = 365 ma, v g = - 2.6 v typical. 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 0 2 4 6 8 10 12 14 16 18 drain current (a) p in (dbm) drain current vs. input power vs. temp. cw, freq = 9.5 ghz - 40 c 25 c 85 c -0.5 1.5 3.5 5.5 7.5 9.5 11.5 8.5 9.0 9.5 10.0 10.5 gate current (ma) frequency (ghz) gate current vs. frequency vs. v d 28 v 30 v 32 v cw, p in = 15 dbm, temp = 25 c 25 v -0.5 4.5 9.5 14.5 19.5 24.5 29.5 34.5 39.5 44.5 49.5 0 2 4 6 8 10 12 14 16 18 gate current (ma) p in (dbm) gate current vs. input power vs. temp. cw, freq = 9.5 ghz - 40 c 25 c 85 c 1.0 1.2 1.4 1.6 1.8 2.0 8.5 9.0 9.5 10.0 10.5 drain current (a) frequency (ghz) drain current vs. frequency vs. temp. cw, p in = 15 dbm - 40 c 25 c 85 c 1.0 1.2 1.4 1.6 1.8 2.0 8.5 9.0 9.5 10.0 10.5 drain current (a) frequency (ghz) drain current vs. frequency vs. v d cw, p in = 15 dbm, temp = 25 c 28 v 30 v 32 v 25 v -0.5 2.5 5.5 8.5 11.5 14.5 17.5 20.5 23.5 26.5 29.5 32.5 8.5 9.0 9.5 10.0 10.5 gate current (ma) frequency (ghz) gate current vs. frequency vs. temp. cw, p in = 15 dbm - 40 c 25 c 85 c
t ga 2624 - cp 9 to 10 ghz, 1 6 w gan power amplifier preliminary datasheet: 11 - 03 - 14 - 10 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance: linearity condition s unless otherwise specified : v d = 28 v , i dq = 365 ma, v g = - 2.6 v typical . -50 -45 -40 -35 -30 -25 -20 -15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. drain current cw, freq = 9.5 ghz, temp = 25 c 365 ma 145 ma -65 -60 -55 -50 -45 -40 -35 -30 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. frequency cw, temp = 25 c 9.5 ghz 10 ghz 9 ghz -65 -60 -55 -50 -45 -40 -35 -30 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. drain current cw, freq = 9.5 ghz, temp = 25 c 365 ma 145 ma -50 -45 -40 -35 -30 -25 -20 -15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. frequency cw, temp = 25 c 9.5 ghz 10 ghz 9 ghz -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 9.0 9.2 9.4 9.6 9.8 10.0 3 f 0 output power (dbc) frequency (ghz) 3 rd harmonic vs. frequency vs. p in cw, v d = 28 v, i dq = 145 ma, temp = 25 c 15 dbm 5 dbm -44 -42 -40 -38 -36 -34 -32 -30 9.0 9.2 9.4 9.6 9.8 10.0 2 f 0 output power (dbc) frequency (ghz) 2 nd harmonic vs. frequency vs. p in cw, v d = 28 v, i dq = 145 ma, temp = 25 c 15 dbm 5 dbm
t ga 2624 - cp 9 to 10 ghz, 1 6 w gan power amplifier preliminary datasheet: 11 - 03 - 14 - 11 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance: small signal condition s unless otherwise specified : v d = 28 v , i dq = 365 ma, v g = - 2.6 v typical. 15 18 21 24 27 30 33 36 39 42 8.5 9.0 9.5 10.0 10.5 s21 (db) frequency (ghz) gain vs. frequency vs. temperature - 40 c 25 c 85 c v d = 28 v, cw 15 18 21 24 27 30 33 36 39 42 8.5 9.0 9.5 10.0 10.5 s21 (db) frequency (ghz) gain vs. frequency vs. drain current 365 ma 145 ma v d = 28 v, cw -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 8.5 9.0 9.5 10.0 10.5 s11 (db) frequency (ghz) input return loss vs. frequency vs. temp. - 40 c 25 c 85 c v d = 28 v, cw -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 8.5 9.0 9.5 10.0 10.5 s11 (db) frequency (ghz) irl vs. frequency vs. drain current 365 ma 145 ma v d = 28 v, cw -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 8.5 9.0 9.5 10.0 10.5 s22 (db) frequency (ghz) output return loss vs. freq. vs. temp. - 40 c 25 c 85 c v d = 28 v, cw -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 8.5 9.0 9.5 10.0 10.5 s22 (db) frequency (ghz) orl vs. frequency vs. drain current 365 ma 145 ma v d = 28 v, cw
t ga 2624 - cp 9 to 10 ghz, 1 6 w gan power amplifier preliminary datasheet: 11 - 03 - 14 - 12 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com applications information and pin layout bias - up procedure 1. set i d limi t to 3 a, i g limit to 14 ma 2. apply ?5 v to v g 3. apply +28 v t o v d ; ensure i dq is approx. 0 ma 4. adjust v g un til i dq = 365 ma (v g ~ ?2.6 v typ ic al ). 5. turn on rf supply bias - down procedure 1. turn off rf supply 2. reduce v g to ?5 v; e nsure i dq is approx. 0 ma 3 . set v d to 0 v 4 . turn off v d supply 5. turn off v g supply pin description p in n o. symbol description 1,5 v g gate voltage; bias network is required; must be biased from both sides; see recommended application information above. 3 rf in output; matched to 50 ; dc blocked 2,4,7,9 gnd must be grounded on the pcb. 6,10 v d drain voltage; bias network is required; must be biased from both sides; see recommended application information above. 8 rf out input; matched to 50 ; dc blocked 8 rf out rf in 3 vd c1 0.1uf r1 10 ohms c5 10 - 47uf c2 0.1uf r2 10 ohms c6 10 - 47uf c7 0.01uf r5 10 ohms c8 0.01uf r6 10 ohms 6 7 9 10 5 4 2 1
t ga 2624 - cp 9 to 10 ghz, 1 6 w gan power amplifier preliminary datasheet: 11 - 03 - 14 - 13 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com evaluation board note: both top and bottom vd and vg must be biased. bill of material reference des. value description manuf. part number c1, c2 0.1 f cap, 0402 , 50 v, 10%, x7r various c5, c6 1 0 - 47 f cap, 1206, 50 v, 20%, x5r (10v is ok) various c7, c8 0.01 f cap, 0402 , 50v , 10%, x7r various r1, r2, r5, r6 10 ohms res, 0402, 50v, 5% various r3, r4 0 ohms res, 0402, jumper required for th e above evb design various vg gnd v d gnd vg gnd v d gnd c5 r3 c1 r1 r2 c2 r4 c6 c7 r5 r6 c8 cp-06 evb rf out rf in 1119607 rev a c1 c2 c3 c4 c5 c6 c7 c8 c9 c10 c11 c12 r7 r8 r1 r2 r3 r4 r5 r6 p1 p2
t ga 2624 - cp 9 to 10 ghz, 1 6 w gan power amplifier preliminary datasheet: 11 - 03 - 14 - 14 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com assembly notes 1. clean the board or module with alcohol. allow it to dry fully. 2. nylock screws are reco mmended for mounting the tga262 4 - cp to the board. 3. to improve the thermal and rf performance, we recommend the following: a. apply thermal compound or 4 mils indium shim between the package and the board. b. attach a heat sink to the bottom of the board and apply thermal compound or 4 mils indium shim between the heat sink and the board. 4. apply solder to each pin of the t ga2 62 4 - cp. 5. clean the assembly with alcohol. mechanical information units: inches tolerances: unless specified x.xx = 0.01 x.xxx = 0.005 materials: base: copper lid: plastic all metalized features are gold plated part is epoxy sealed marking: 262 4 : part number yy: part assembly year ww: part assembly week zzz: serial number mxxx: batch id
t ga 2624 - cp 9 to 10 ghz, 1 6 w gan power amplifier preliminary datasheet: 11 - 03 - 14 - 15 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability comp atible with the latest version of j - std - 020, lead - free solder, 26 0 c roh s compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? ? ? ? 15 h 12 br 4 0 2 ) free ? ? msl rating level 5a at 260 c convection reflow . the part is ra ted moisture sensitivity level 5a at 260 c per jedec standard ipc/jedec j - std - 020. eccn us department of commerce : 3a001.b.2.b contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: info - products@triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provid ed "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant informa tion before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with r egard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure w ould reasonably be expected to cause severe personal injury or death.

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